? semiconductor components industries, llc, 2001 october, 2001 rev. 3 685 publication order number: mmbv2101lt1/d mmbv2101lt1 series, mv2105, mv2101, mv2109, lv2205, lv2209 silicon tuning diodes 6.8100 pf, 30 volts voltage variable capacitance diodes these devices are designed in popular plastic packages for the high volume requirements of fm radio and tv tuning and afc, general frequency control and tuning applications. they provide solidstate reliability in replacement of mechanical tuning methods. also available in a surface mount package up to 33 pf. ? high q ? controlled and uniform tuning ratio ? standard capacitance tolerance 10% ? complete typical design curves maximum ratings rating symbol value unit reverse voltage v r 30 vdc forward current i f 200 madc forward power dissipation @ t a = 25 c mmbv21xx derate above 25 c @ t a = 25 c mv21xx derate above 25 c lv22xx p d 225 1.8 280 2.8 mw mw/ c junction temperature t j +150 c storage temperature range t stg 55 to +150 c device marking mmbv2101lt1 = m4g mmbv2108lt1 = 4x mv2109 = mv2109 mmbv2103lt1 = 4h mmbv2109lt1 = 4j lv2205 = lv2205 mmbv2105lt1 = 4u mv2101 = mv2101 lv2209 = lv2209 mmbv2107lt1 = 4w mv2105 = mv2105 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 m adc) mmbv21xx, mv21xx lv22xx v (br)r 30 25 vdc reverse voltage leakage current (v r = 25 vdc, t a = 25 c) i r 0.1 m adc diode capacitance temperature coefficient (v r = 4.0 vdc, f = 1.0 mhz) tc c 280 ppm/ c http://onsemi.com preferred devices are recommended choices for future use and best overall value. marking diagram 3 cathode 1 anode 2 cathode 1 anode sot23 to92 1 2 3 1 2 xx xxxx yww to226ac, to92 case 182 style 1 to236ab, sot23 case 31808 style 8 xxx m xxx = device code* m = date code * see table xx = device code line 1* xxxx = device code line 2* m = date code * see table
mmbv2101lt1 series, mv2105, mv2101, mv2109, lv2205, lv2209 http://onsemi.com 686 c t , diode capacitance v r = 4.0 vdc, f = 1.0 mhz pf q, figure of merit v r = 4.0 vdc, f = 50 mhz tr, tuning ratio c 2 /c 30 f = 1.0 mhz device min nom max typ min typ max mmbv2101lt1/mv2101 6.1 6.8 7.5 450 2.5 2.7 3.2 mmbv2103lt1 9.0 10 11 400 2.5 2.9 3.2 lv2205/mmbv2105lt1/mv2105 13.5 15 16.5 400 2.5 2.9 3.2 mmbv2107lt1 19.8 22 24.2 350 2.5 2.9 3.2 mmbv2108lt1 24.3 27 29.7 300 2.5 3.0 3.2 lv2209mmbv2109lt1/mv2109 29.7 33 36.3 200 2.5 3.0 3.2 mmbv2101lt1, mmbv2103lt1, mmbv2105lt1, mmbv2107lt1 thru mmbv2109lt1, are also available in bulk. use the device title and drop the ot1o suffix when ordering any of these devices in bulk. parameter test methods 1. c t , diode capacitance (c t = c c + c j ). c t is measured at 1.0 mhz using a capacitance bridge (boonton electronics model 75a or equivalent). 2. tr, tuning ratio tr is the ratio of c t measured at 2.0 vdc divided by c t measured at 30 vdc. 3. q, figure of merit q is calculated by taking the g and c readings of an admittance bridge at the specified frequency and substituting in the following equations: q 2 fc g (boonton electronics model 33as8 or equivalent). use lead length 1/16o. 4. tc c , diode capacitance temperature coefficient tc c is guaranteed by comparing c t at v r = 4.0 vdc, f = 1.0 mhz, t a = 65 c with c t at v r = 4.0 vdc, f = 1.0 mhz, t a = +85 c in the following equation, which defines tc c : tc c
c t ( 85 c) c t (65 c) 85 65
10 6 c t (25 c) accuracy limited by measurement of c t to 0.1 pf.
mmbv2101lt1 series, mv2105, mv2101, mv2109, lv2205, lv2209 http://onsemi.com 687 typical device characteristics figure 1. diode capacitance versus reverse voltage figure 2. normalized diode capacitance versus junction temperature figure 3. reverse current versus reverse bias voltage figure 4. figure of merit versus reverse voltage v r , reverse voltage (volts) 1.0 2.0 0.2 10 30 20 1.0 2.0 5.0 10 1000 50 20 100 500 5.0 0.5 0.1 200 c t , diode capacitance (pf) t a = 25 c f = 1.0 mhz mmbv2109lt1/mv2109 1.040 1.030 1.020 1.010 1.000 0.990 0.980 t j , junction temperature ( c) +125 -75 -25 0 +25 +50 -50 +75 normalized diode capacitance +100 0.970 0.960 v r = 2.0 vdc v r = 4.0 vdc v r = 30 vdc 100 50 20 10 5.0 0.01 v r , reverse voltage (volts) 5.0 10 20 15 25 i 30 , reverse current (na) r 0.02 0.05 0.10 0.20 0.50 1.0 2.0 t a = 125 c t a = 75 c t a = 25 c 100 200 500 1000 5000 2000 1.0 2.0 5.0 7.0 10 3.0 20 v r , reverse voltage (volts) q, figure of merit 2000 1000 200 500 300 100 f, frequency (mhz) 10 30 50 70 q, figure of merit 100 3000 50 30 20 10 20 200 250 t a = 25 c f = 50 mhz t a = 25 c v r = 4.0 vdc figure 5. figure of merit versus frequency mmbv2105lt1/mv2105 mmbv2101lt1/mv2101 3.0 0.3 0 10 20 50 300 3000 30 30 mmbv2101lt1/mv2101 mmbv2109lt1 5000 mmbv2101lt1/mv2101 mmbv2109lt1/mv2109 normalized to c t at t a = 25 c v r = (curve)
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